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GenX3TM 600V IGBT with Diode High speed PT IGBTs for 40-100 kHz Switching IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-268 TO-247 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load @ VCE 600V TC = 25C 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 4 6 W C C C C C Nm/lb.in g g Features Optimized for low switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages High power density Low gate drive requirement Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 600 3.5 TJ = 125C 2.6 1.8 5.5 V V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Maximum Ratings 600 600 20 30 60 30 30 150 ICM = 60 V V V V A A A A A G C TO-247(IXGH) G E C (TAB) E C ( TAB ) G = Gate E = Emitter = Collector TAB = Collector BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC 75 A 1 mA 100 3.0 nA V V = 20A, VGE = 15V, Note 1 TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved DS100013A(11/08) IXGH30N60C3D1 IXGT30N60C3D1 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS IC = 20A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 9 30 915 78 32 38 8 17 16 26 0.27 42 47 0.09 17 28 0.44 70 90 0.33 0.21 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W TO-268 (IXGT) Outline IC = 20A, VGE = 15V, VCE = 0.5 * VCES Inductive load, TJ = 25C IC = 20A, VGE = 15V VCE = 300V, RG = 5 75 0.18 Inductive load, TJ = 125C IC = 20A, VGE = 15V VCE = 300V, RG = 5 (TO-247) TO-247 AD Outline Reverse Diode (FRED) Symbol VF IRM trr RthJC Test Conditions IF = 30A, VGE = 0V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 2.7 TJ = 150C 1.6 4 100 25 V V A ns ns e P IF = 30A, VGE = 0V, -diF/dt = 100A/s, TJ = 100C VR = 100V TJ =100C IF = 1A, -di/dt = 100A/s, VR = 30V 0.9 C/W Dim. Note 1: Pulse test, t 300s, duty cycle, d 2%. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 1. Output Characteristics @ 25C 40 35 30 VGE = 15V 13V 180 160 140 11V 120 13V VGE = 15V Fig. 2. Extended Output Characteristics @ 25C IC - Amperes IC - Amperes 25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 7V 9V 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 9V 11V 7V VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125C 40 35 30 VGE = 15V 13V 11V 1.1 Fig. 4. Dependence of VCE(sat) on Junction Temperature VGE = 15V 1.0 I C = 40A VCE(sat) - Normalized IC - Amperes 25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 9V 0.9 0.8 I 0.7 I C C = 20A 0.6 7V 0.5 2.8 3.2 25 50 75 = 10A 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.5 TJ = 25C 5.0 70 60 50 Fig. 6. Input Admittance VCE - Volts I 4.0 C = 40A 20A 10A IC - Amperes 4.5 40 30 20 10 0 TJ = 125C 25C - 40C 3.5 3.0 2.5 7 8 9 10 11 12 13 14 15 5 6 7 8 9 10 11 VGE - Volts VGE - Volts (c) 2008 IXYS CORPORATION, All rights reserved IXGH30N60C3D1 IXGT30N60C3D1 Fig. 7. Transconductance 24 22 20 18 25C 125C TJ = - 40C 16 14 12 VCE = 300V I C = 20A I G = 10 mA Fig. 8. Gate Charge g f s - Siemens 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 VGE - Volts 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance 10,000 60 50 Fig. 10. Reverse-Bias Safe Operating Area f = 1 MHz Capacitance - PicoFarads Cies 1,000 IC - Amperes 40 30 20 TJ = 125C 10 RG = 5 dV / dt < 10V / ns 100 Coes Cres 10 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.00 Z(th)JC - C / W 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N60C3(4D)7-25-08 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.8 Eoff 0.7 VCE = 300V Eon 1.4 0.6 Eoff 1.2 0.5 VCE = 300V Eon Fig. 13. Inductive Switching Energy Loss vs. Collector Current 1.2 --- ---1.0 TJ = 125C , VGE = 15V RG = 5 , VGE = 15V Eoff - MilliJoules Eoff - MilliJoules 0.6 I C = 40A 1.0 0.4 TJ = 125C 0.8 E E - MilliJoules on on - MilliJoules 0.5 0.8 0.3 0.6 0.4 0.6 0.2 TJ = 25C 0.4 0.3 I C = 20A 0.4 0.1 0.2 0.2 4 6 8 10 12 14 16 18 20 0.2 0.0 10 15 20 25 30 35 40 0.0 RG - Ohms IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 35 45 55 65 75 85 95 105 115 I C = 20A Eoff VCE = 300V I C = 40A 0.8 0.6 0.4 0.2 0.0 125 Eon 1.4 180 170 1.2 160 1.0 150 140 130 120 110 100 90 80 4 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 140 ---- tf VCE = 300V td(off) - - - - 130 120 RG = 5 , VGE = 15V TJ = 125C, VGE = 15V t d(off) - Nanoseconds t f - Nanoseconds Eoff - MilliJoules 110 100 I C E - MilliJoules on = 40A 90 80 70 I C = 20A 60 50 40 6 8 10 12 14 16 18 20 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 180 160 140 110 160 140 120 100 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 90 tf VCE = 300V td(off) - - - - RG = 5 , VGE = 15V 100 90 tf VCE = 300V td(off) - - - - RG = 5 , VGE = 15V 80 t d(off) - Nanoseconds t f - Nanoseconds 120 100 80 60 40 20 0 10 15 20 TJ = 125C 80 70 60 50 t f - Nanoseconds 70 60 I C = 40A, 20A 50 40 30 20 125 t d(off) - Nanoseconds 80 60 40 20 25 35 45 55 65 75 85 95 105 115 TJ = 25C 40 30 20 25 30 35 40 IC - Amperes TJ - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXGH30N60C3D1 IXGT30N60C3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 80 70 30 70 60 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 24 tr VCE = 300V td(on) - - - - TJ = 125C, VGE = 15V 28 26 I = 40A 24 22 20 18 16 14 tr VCE = 300V td(on) - - - - RG = 5 , VGE = 15V 22 t d(on) - Nanoseconds t d(on) - Nanoseconds t r - Nanoseconds t r - Nanoseconds 50 40 30 20 10 0 10 20 TJ = 125C 18 TJ = 25C 16 14 12 10 60 50 40 30 20 10 4 6 8 10 C I C = 20A 12 14 16 18 20 15 20 25 30 35 40 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 75 70 65 60 I C = 40A 20 21 t d(on) - Nanoseconds t r - Nanoseconds 55 50 45 40 35 30 25 20 15 25 35 45 55 65 75 I C tr VCE = 300V td(on) - - - - 19 RG = 5 , VGE = 15V 18 = 20A 17 16 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N60C3(4D)7-25-08 IXGH30N60C3D1 IXGT30N60C3D1 60 A 50 IF 40 1000 nC 800 Qr TVJ= 100C VR = 300V IRM 30 A 25 20 15 10 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A TVJ=150C 30 20 600 TVJ=100C IF= 60A IF= 30A IF= 15A 400 TVJ=25C 10 0 200 5 0 0 1 2 VF 3V 0 100 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 21. Forward current IF versus VF 2.0 Fig. 22. Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 23. Peak reverse current IRM versus -diF/dt 20 V V FR 15 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A TVJ= 100C IF = 30A tfr VFR 1.00 tfr 0.75 s 1.5 Kf 1.0 trr 80 10 0.50 IRM 70 0.5 Qr 5 0.25 0.0 0 40 80 120 C 160 T VJ 60 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.00 600 A/s 1000 800 diF/dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 Z thJC 1 2 3 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 27. Transient thermal resistance junction to case (c) 2008 IXYS CORPORATION, All rights reserved |
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